MMR TECHNOLOGY HK LIMITED

MMR TECHNOLOGY HK LIMITED

Manufacturer from China
Active Member
3 Years
Home / Products / Insulated Gate Bipolar Transistor /

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

Contact Now
MMR TECHNOLOGY HK LIMITED
Country/Region:china
Contact Now

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

Ask Latest Price
Video Channel
Brand Name :MITSUBISHI
price :Competitive
Model Number :CM600YE2N-12F
Payment Terms :T/T
MITSUBISHI CM600YE2N-12F :1200 V
Collector Current (Ic) :600 A
Datasheet :2400 W
Operating Temperature (Top) :-40°C to +150°C
Storage Temperature (Tstg) :-40°C to +125°C
Dimensions (W x D x H) :100mm x 140mm x 30mm
Weight :1.1kg
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

Product Description:

MITSUBISHI CM600YE2N-12F power transistor module. This high-performance module is designed to deliver exceptional power handling capabilities for various applications. With a collector-emitter voltage (Vces) of 1200V and a collector current (Ic) rating of 600A, it provides reliable and efficient power control.

The CM600YE2N-12F module boasts a maximum power dissipation (Pc) of 2400W, allowing it to handle demanding power requirements with ease. It operates within a wide temperature range of -40°C to +150°C, ensuring reliable performance even in extreme environments. The module's storage temperature (Tstg) range is -40°C to +125°C, providing flexibility for storage and transportation.

With its compact dimensions of 100mm x 140mm x 30mm and a weight of 1.1kg, the CM600YE2N-12F module offers easy integration into various systems and applications.

MITSUBISHI CM600YE2N-12F power transistor module is a reliable choice that delivers exceptional performance and durability.

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

MITSUBISHI CM600YE2N-12F IGBT Module 12V 600A

Inquiry Cart 0